发明名称 Semiconductor memory device having advanced test mode
摘要 An apparatus for testing an operation of a semiconductor memory device having a plurality of banks in a compress test mode includes an internal address generator for receiving an external bank address and generating internal bank addresses in response to a bank interleaving test signal; a read operation testing block for receiving the internal bank addresses and testing a read operation of the semiconductor memory device in response to the bank interleaving test signal; and a write operation testing block for receiving the internal bank addresses and testing a write operation of the semiconductor memory device.
申请公布号 US7441156(B2) 申请公布日期 2008.10.21
申请号 US20070005539 申请日期 2007.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AN YONG-BOK
分类号 G06F11/00;G01R31/28;G11C29/00;G11C29/26 主分类号 G06F11/00
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