| 发明名称 |
Semiconductor device having via connecting between interconnects |
| 摘要 |
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.
|
| 申请公布号 |
US7439623(B2) |
申请公布日期 |
2008.10.21 |
| 申请号 |
US20040000904 |
申请日期 |
2004.12.02 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARADA TAKESHI |
| 分类号 |
H01L23/52;H01L29/40;H01L21/31;H01L21/3205;H01L21/4763;H01L21/768;H01L21/822;H01L23/48;H01L23/522;H01L23/532;H01L27/04 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
