| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to prevent a storage electrode from being damaged upon high formation of the storage electrode to increase capacitance. A semiconductor device includes a transistor, a plurality of landing plugs(170), a bit line(190), a storage node contact plug(210), and a plurality of storage electrodes. The transistor is formed on a substrate(100) and has gate, source, and drain junction. The plurality of landing plugs are formed on the source and drain junction of the transistor. The bit line contacts with one of the plurality of landing plugs. The storage node contact plug contacts with the other landing plug to be insulated from the bit line. The plurality of storage electrodes are respectively connected to the plurality of storage node contact plugs to be separated formed to each other.
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