| 摘要 |
A display device includes a glass substrate having a gate line, a drain line, a pixel electrode, and a thin film transistor. A silicon nitride film is formed on the glass substrate, and a silicon oxide film is formed on the silicon nitride film. The thin film transistor is formed on the silicon oxide film, and includes a poly-silicon film, a gate electrode which is electrically connected to the gate line, a drain electrode which connected to the drain line, and a source electrode which is electrically connected to the pixel electrode. A gate insulation film is formed between the silicon oxide film and the gate electrode, and an interlayer film is interposed between the gate insulation film and the pixel electrode. The silicon nitride film has a larger film thickness than that of the silicon oxide film, and the films are configured so as to reduce reflection.
|
