发明名称 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate |
摘要 |
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
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申请公布号 |
US7438762(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20060509063 |
申请日期 |
2006.08.24 |
申请人 |
STANLEY ELECTRIC CO., LTD., TOKYO DENPA CO., LTD., AND TOHOKU UNIVERSITY |
发明人 |
KATO HIROYUKI;SANO MICHIHIRO;MAEDA KATSUMI;YONEYAMA HIROSHI;YAO TAKAFUMI;CHO MEOUNG WHAN |
分类号 |
C30B25/12;C23C14/08;C30B29/16;H01L21/363 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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地址 |
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