发明名称 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
摘要 A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
申请公布号 US7438762(B2) 申请公布日期 2008.10.21
申请号 US20060509063 申请日期 2006.08.24
申请人 STANLEY ELECTRIC CO., LTD., TOKYO DENPA CO., LTD., AND TOHOKU UNIVERSITY 发明人 KATO HIROYUKI;SANO MICHIHIRO;MAEDA KATSUMI;YONEYAMA HIROSHI;YAO TAKAFUMI;CHO MEOUNG WHAN
分类号 C30B25/12;C23C14/08;C30B29/16;H01L21/363 主分类号 C30B25/12
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