| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to remove a bubble shaped defect generated on a surface of a doped gate poly silicon layer of a rear substrate by surrounding the doped poly silicon layer of the rear substrate with an undoped gate poly silicon layer. A semiconductor substrate(10) of a gate expectation region is etched to form a recess. A gate dielectric is formed on an upper portion of an upper portion of the whole surface. A doped first poly silicon layer(16) is formed on an upper portion of the gate dielectric of a front and a rear of the semiconductor substrate. The doped first poly silicon layer of the front of the semiconductor substrate is etched. An undoped poly silicon layer is formed on an upper portion of the doped first poly silicon layer. An ion implantation process is performed on the undoped poly silicon layer to form a doped second poly silicon layer(18). An electrode layer(20) and a hard mask layer(22) are formed on an upper portion of the doped second poly silicon layer. The hard mask layer, the electrode layer, and the doped second poly silicon layer are etched with a photo etching process using a gate mask.</p> |
