发明名称 |
Stacked gate memory cell with erase to gate, array, and method of manufacturing |
摘要 |
A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injecton from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.
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申请公布号 |
US7439572(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20050303567 |
申请日期 |
2005.12.15 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
CHEN BOMY;TRAN HIEU VAN;LEE DANA;FRAYER JACK EDWARD |
分类号 |
H01L29/788;G11C16/04;H01L21/8247;H01L27/115;H01L29/76 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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