发明名称 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
摘要 |
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
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申请公布号 |
US7438760(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20060343275 |
申请日期 |
2006.01.30 |
申请人 |
ASM AMERICA, INC. |
发明人 |
BAUER MATTHIAS;WEEKS KEITH DORAN;TOMASINI PIERRE;CODY NYLES |
分类号 |
H01L21/20;C30B25/00;C30B28/12;H01L21/4763 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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