发明名称 |
Structure and method for forming SOI trench memory with single-sided strap |
摘要 |
A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a conductive capacitor electrode material formed within the trench in contact with the node dielectric layer; forming a strap mask so as cover one side of the trench and removing one or more materials from an uncovered opposite side of the trench; and forming a conductive buried strap material within the trench; wherein the strap mask is patterned in a manner such that a single-sided buried strap is defined within the trench, the single-sided buried strap configured in a manner such that the deep trench capacitor is electrically accessible at only one side of the trench.
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申请公布号 |
US7439149(B1) |
申请公布日期 |
2008.10.21 |
申请号 |
US20070861704 |
申请日期 |
2007.09.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DIVAKARUNI RAMACHANDRA;HO HERBERT L.;WANG GENG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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