| 摘要 |
Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material ( 12 ) on a substrate ( 10 ), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the spin-coated solution to form a film ( 14 ) of the film-forming substance on the unpatterned areas of the substrate and on the surface and sides of the pre-patterned material, (iv) etching the dried film in such a way that it remains only around the sides of the pre-patterned material, and (v) removing the pre-patterned material to leave ridges ( 20 ) of the film-forming substance on the substrate, the pattern of the ridges corresponding to the outline of the pre-patterned material. A metal layer may then be deposited on the resulting patterned substrate followed by removal of the ridges leaving discrete areas of metal which form latent source and drain electrodes of a thin film transistor. An array of thin film transistors may then be formed by selectively depositing areas of semiconductor, insulator and conductor, the latter forming a gate electrode associated with each pair of source and drain electrodes.
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