发明名称 Acoustic wave device and method of manufacturing acoustic wave device
摘要 An acoustic wave device capable of exhibiting good characteristics for a prolonged period of time and a method of manufacturing an acoustic wave device are provided. An acoustic wave device of the invention includes a piezoelectric body layer having piezoelectricity and one surface, a pair of electrodes for, when electrified, inducing acoustic vibration in the piezoelectric body layer, the electrodes arranged on the one surface of the piezoelectric body layer, and a silicon dioxide layer provided in contact with the piezoelectric body layer and/or the electrodes, the silicon dioxide layer composed of silicon dioxide as its major component, wherein the silicon dioxide layer is formed by performing sputtering with a silicon dioxide target in an atmosphere of an oxygen flow rate ratio of 60% or more.
申请公布号 US7439649(B2) 申请公布日期 2008.10.21
申请号 US20070820223 申请日期 2007.06.18
申请人 SEIKO EPSON CORPORATION 发明人 FUJII SATOSHI;FUNAKAWA TAKEO
分类号 H03H9/25 主分类号 H03H9/25
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