Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same

摘要

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 mum thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R¹ and R² express a monovalent organic group, and may be identical or different; "A" is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and "a", "b," and "c" satisfy the following relation; a+b+c=1, in the Formula (2), R³, R⁴, and R⁵ express one of a hydrogen atom and a monovalent organic group, and may be identical or different, "m" expresses an integer, and "n" expresses an integer of 1 to 5. Preferably, 0.25<=a<=0.60, and 0<=c<=0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.