发明名称 Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
摘要 A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also include providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion of the bipolar transistor.
申请公布号 US7439558(B2) 申请公布日期 2008.10.21
申请号 US20050267473 申请日期 2005.11.04
申请人 ATMEL CORPORATION 发明人 ENICKS DARWIN GENE
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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