Charged particle beam irradiation method, method of manufacturing semiconductor device and charged particle beam apparatus

摘要

A charged particle beam irradiation method includes: obtaining shape information of an edge of a pattern to be inspected that is formed on a subject; creating a first line group substantially perpendicular to the pattern edge; creating a second line group substantially parallel with the pattern edge; specifying areas defined by the first line group and the second line group as a lattice group including irradiation positions of a charged particle beam; deciding an order to irradiate the areas with the charged particle beam so that the lattice group is sequentially scanned in a direction of the first or second line group; and scanning the subject with the charged particle beam in accordance with the irradiation order.