发明名称 |
High voltage generation circuit and semiconductor device having the same |
摘要 |
A high voltage generation circuit includes a pump clock generation unit configured to generate a pump clock signal in response to a pumping enable signal, a charge pump configured to generate a high voltage on an output in response to the pump clock signal, and a switching unit to selectively couple the output of the charge pump to an output node in response to the pumping enable signal.
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申请公布号 |
US7439792(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20060549411 |
申请日期 |
2006.10.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK PAN-SUK;BYEON DAE-SEOK |
分类号 |
H03K3/10 |
主分类号 |
H03K3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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