发明名称 High voltage generation circuit and semiconductor device having the same
摘要 A high voltage generation circuit includes a pump clock generation unit configured to generate a pump clock signal in response to a pumping enable signal, a charge pump configured to generate a high voltage on an output in response to the pump clock signal, and a switching unit to selectively couple the output of the charge pump to an output node in response to the pumping enable signal.
申请公布号 US7439792(B2) 申请公布日期 2008.10.21
申请号 US20060549411 申请日期 2006.10.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK PAN-SUK;BYEON DAE-SEOK
分类号 H03K3/10 主分类号 H03K3/10
代理机构 代理人
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