发明名称 |
Technique for stable processing of thin/fragile substrates |
摘要 |
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.
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申请公布号 |
US7439178(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20070675407 |
申请日期 |
2007.02.15 |
申请人 |
ICEMOS TECHNOLOGY CORPORATION |
发明人 |
WILSON ROBIN;BROGAN CONOR;GRIFFIN HUGH J.;MACNAMARA CORMAC |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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