| 摘要 |
Methods and apparatus are provided for reducing substrate leakage current of RESURF LDMOSFET devices. A semiconductor device comprises a semiconductor substrate ( 22 ) of a first type; first and second terminals ( 39,63 ) laterally spaced-apart on a surface ( 35 ) above the substrate; a first semiconductor region ( 32 ) of the first type overlying the substrate and ohmically coupled to the first terminal ( 39 ); a second semiconductor region ( 48 ) of a second opposite type in proximity to the first region and ohmically coupled to the first terminal; a third semiconductor region ( 30 ) of the second type overlying the substrate and ohmically coupled to the second terminal ( 63 ) and laterally arranged with respect to the first region; a parasitic vertical device comprising the first region and the substrate, the parasitic vertical device for permitting leakage current to flow from the first terminal to the substrate; a fourth semiconductor region ( 62 ) of the first type in proximity to the third region and ohmically coupled to the second terminal, thereby forming in combination with the third region a shorted base-collector region of a lateral transistor extending between the first and second terminals to provide diode action; a channel region ( 27 ) of the first type separating the first and third regions at the surface; a gate insulator ( 43 ) overlying the channel region; and a gate electrode ( 42 ) overlying the gate insulator.
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