发明名称 |
INTEGRATION APPROACH TO FORM THE CORE FLOATING GATE FOR FLASH MEMORY USING AN AMORPHOUS CARBON HARD MASK AND ARF LITHOGRAPHY |
摘要 |
Systems and methods are described that facilitate integrating ArF core patterning of floating gate structures in a flash memory device followed by KrF periphery gate patterning using a hard mask comprising a material such as amorphous carbon to facilitate core gate construction. The amorphous carbon hard mask can facilitate preparing such core gate structures while protecting periphery gate stacks such that the periphery stacks are ready for immediate KrF lithography upon completion of core gate formation without requiring additional resist deposition between core and periphery etches.
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申请公布号 |
US2008254607(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20070733935 |
申请日期 |
2007.04.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PLAT MARINA V.;BELL SCOTT A. |
分类号 |
H01L21/3205;H01L21/306 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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