SILICON NITRIDE FILM AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要
Provided is a silicon nitride film having excellent charge storage performance effective as a charge storage layer for a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus (100) wherein microwaves are introduced into a chamber (1) by a flat antenna (31) having a plurality of holes. Plasma is generated by the microwaves by introducing a material gas, which contains a nitrogen containing compound and a silicon containing compound, into the chamber (1), and the silicon nitride film is deposited on the surface of a body to be processed by the plasma.
申请公布号
WO2008123289(A1)
申请公布日期
2008.10.16
申请号
WO2008JP55679
申请日期
2008.03.26
申请人
TOKYO ELECTRON LIMITED;HIROSHIMA UNIVERSITY;MIYAZAKI, SEIICHI;KOHNO, MASAYUKI;NISHITA, TATSUO;NAKANISHI, TOSHIO;HIROTA, YOSHIHIRO