发明名称 |
ELECTROSTATIC CHUCK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To reduce the occurrence of defective to be formed on a surface to be attracted when various kinds of processing are executed using an electrostatic chuck in a state where an object to be attracted is kept at high temperature. SOLUTION: This electrostatic chuck 6 is provided with a dielectric layer 14, an electrode 13 for inducing electric charges on the surface of the dielectric layer 14 and a heater for heating the dielectric layer 14 to not less than 400°C. The electrostatic chuck 6 is further provided with an insulating member 20 in which a surface contacting the object to be attracted (semiconductor wafer 1) is mirror-finished. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008251579(A) |
申请公布日期 |
2008.10.16 |
申请号 |
JP20070087299 |
申请日期 |
2007.03.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KUDO CHIAKI;KUSUMOTO OSAMU |
分类号 |
H01L21/683;H02N13/00 |
主分类号 |
H01L21/683 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|