| 摘要 |
PROBLEM TO BE SOLVED: To provide a high reception sensitivity semiconductor photodetector capable of providing larger photo current than ever before. SOLUTION: The semiconductor photodetector includes: an InP substrate 1; an optical waveguide 5 having an N-type semiconductor layer 2 formed on the InP substrate 1, an optical waveguide core layer 3 formed on a partial area of the N-type semiconductor layer 2, and an upper cladding layer 4 formed on the optical waveguide core layer 3; and an avalanche photodiode 17 constructed by forming a photo absorbing layer 12, a heterobarrier relaxing layer 13, an underlying layer 14a of an N-type field dropping layer 14, an overlying layer 14b of the N-type field dropping layer 14, a carrier multiplying layer 15, and a P-type semiconductor layer 16 in sequence on another area of the N-type semiconductor layer 2, and coupled to the optical waveguide 5, wherein a side surface of the underlying layer 14a of the N-type field dropping layer 14 comes into contact with a side surface of the optical waveguide core layer 3, and a part of the overlying layer 14b of the N-type field dropping layer 14 is formed on the optical waveguide core layer 3. COPYRIGHT: (C)2009,JPO&INPIT
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