| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of further increasing reading speed and reducing the drive voltage, its manufacturing method and a semiconductor device. SOLUTION: The nonvolatile semiconductor memory device has a SiO<SB>2</SB>film 4 formed on a Si substrate 1, a floating gate 5 formed on the SiO<SB>2</SB>film 4, a SiO<SB>2</SB>film 6 formed on the floating gate 5, a Si layer 9 formed on the SiO<SB>2</SB>film 6, a gate oxide film 8 formed on the Si layer 9, and a control gate 11 formed on the gate oxide film 8. A high breakdown voltage source layer 13 and a drain layer 14 for writing data are formed on the Si substrate 1, and a low breakdown the voltage source layer 15 and the drain layer 16 for reading the data are formed on the Si layer 9 under both the sides of the control gate 11. COPYRIGHT: (C)2009,JPO&INPIT
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