发明名称 Plasma Processing Apparatus And Method For Controlling The Same
摘要 A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed within the vacuum vessel, and a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency. The apparatus further comprises a first phase detector for detecting the phase of the third RF voltage supplied to the first electrode and a second phase detector for detecting the phase of the second RF voltage of the second electrode, a voltage detector, and a phase difference computer which computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.
申请公布号 US2008251206(A1) 申请公布日期 2008.10.16
申请号 US20080019150 申请日期 2008.01.24
申请人 NISHIO RYOJI 发明人 NISHIO RYOJI
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址