发明名称 |
Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit |
摘要 |
According to one embodiment of the present invention, a memory device includes a composite structure including a resistivity changing layer and an electrode layer being arranged on or above the resistivity changing layer. The resistivity changing memory device further includes a protection layer being arranged on or above the composite structure, the protection layer protecting the electrode layer against electromagnetic waves.
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申请公布号 |
US2008253168(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20070787143 |
申请日期 |
2007.04.13 |
申请人 |
BLANCHARD PHILIPPE;LEE GILL YONG |
发明人 |
BLANCHARD PHILIPPE;LEE GILL YONG |
分类号 |
G11C11/00;H01R43/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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