发明名称 DEPLETION-MODE MOSFET CIRCUITS AND APPLICATIONS
摘要 Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.
申请公布号 WO2008092004(A3) 申请公布日期 2008.10.16
申请号 WO2008US51913 申请日期 2008.01.24
申请人 KEYSTONE SEMICONDUCTOR, INC.;LIN, WENT, T. 发明人 LIN, WENT, T.
分类号 H01L27/088 主分类号 H01L27/088
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