OXIDE THIN FILM AND OXIDE THIN FILM DEVICE

摘要

Provided are an oxide thin film, which is doped with an n-type impurity and is capable of forming a flat film, and an oxide thin film device. In an oxide thin film (2), as shown in Fig. 1(b), a doped oxide layer (2a) doped with an n-type (electron conductivity type) impurity and an undoped oxide layer (2b) not doped with an n-type impurity are alternately laminated repeatedly. Since roughness of the surface of the oxide layer increases when the oxide layer is doped with the n-type impurity at a high concentration, to form the flat oxide thin film, the oxide layer is covered with the undoped oxide layer (2b), which ensures surface flatness, before the surface roughness extremely increases due to the doped oxide layer (2a).