| 发明名称 |
DOSIMETRY USING OPTICAL EMISSION SPECTROSCOPY/RESIDUAL GAS ANALYZER IN CONJUNCTION WITH ION CURRENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that a precise real time dose measurement is required in a plasma processing chamber such as high frequency plasma immersion ion implantation reactor. <P>SOLUTION: In general, a method and equipment control ion dose in real time during plasma process. In one embodiment, the ion dosages can be controlled using an in-situ measurement of plasma from mass distribution sensor combined with the in-situ measurement from a high frequency probe. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2008252078(A) |
申请公布日期 |
2008.10.16 |
| 申请号 |
JP20080052424 |
申请日期 |
2008.03.03 |
| 申请人 |
APPLIED MATERIALS INC |
发明人 |
RAMASWAMY KARTIK;CHO SEON-MEE;TANAKA TSUTOMU;FOAD MAJEED A |
| 分类号 |
H01L21/265;C23C16/505;C23C16/52;H01L21/205;H01L21/3065;H05H1/00;H05H1/46 |
主分类号 |
H01L21/265 |
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