| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus which evenly forms a film on a substrate of large area, and also to provide a plasma generation method therefor. <P>SOLUTION: The thin-film forming apparatus forms a thin-film on the surface of a substrate by using plasma. It comprises: at least two electrodes arranged to face the surface of substrate; a substrate supporting member which is arranged on the opposite side to the electrode through the substrate, for generating plasma with the electrode; at least one high-frequency power source for supplying a high-frequency voltage to the electrode; and at least one phase shifter for reversing the phase of the electrode applied to the adjoining electrode. The distances between the adjacent electrodes are such values as to generate no discharge between them, and also to be almost equal. <P>COPYRIGHT: (C)2009,JPO&INPIT |
