MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To further reduce a writing current required for magnetization reversal. SOLUTION: A magnetoresistive element 10 is provided with a fixed layer 11 having a fixed magnetization direction; a free layer 13 having a magnetization direction variable due to energization in a direction perpendicular to a film surface; an assisting layer 15 having a magnetization direction variable due to energization in a direction perpendicular to the film surface, and assisting a change in magnetization direction of the free layer 13; an intermediate layer 12 provided between the fixed layer 11 and the free layer 13 and made of a non-magnetic body; and an intermediate layer 14 provided between the free layer 13 and the assisting layer 15 and made of a non-magnetic body. An energy barrier for magnetization reversal of the assisting layer 15 is smaller than an energy barrier for magnetization reversal of the free layer 13. COPYRIGHT: (C)2009,JPO&INPIT