NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a method for manufacturing the same are provided to prevent electrons from being implanted into a floating gate of a non-select memory transistor by forming a gate dielectric after an insulating pattern is formed on a substrate. An active region is defined on a substrate(100). A gate insulating pattern is formed on the substrate. A gate dielectric(120) including the gate insulating pattern is formed along the substrate surface. A select line(SL) and a word line(WL) are formed on the gate dielectric. A part of the select line is overlapped with the gate insulating pattern. The word line is separated from the select line. The word line is separated from the gate insulating pattern. The select line and the word line are extended in a direction being intersected with the active region. When the gate insulating pattern is formed, a first dielectric is formed on the substrate. A mask pattern is formed on the first dielectric. The first dielectric is etched by using the mask pattern.