| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a silicon oxide film in which, upon forming a round shape at a corner of silicon at an upper end of a projection of a pattern, the silicon oxide film can be formed at a uniform film thickness without causing a film thickness difference by a nondense and dense state of the pattern. SOLUTION: When the silicon oxide film is formed by performing an oxidation processing to a processing body having an uneven pattern by a plasma in a processing chamber of a plasma processor, under the condition that a ratio of oxygen in a processing gas is equal to or more than 0.5% and is less than 10%, and a processing pressure is 1.3 to 665 Pa, a high frequency electric power is applied to a placing tray for placing the processing body while being formed by a plasma. COPYRIGHT: (C)2009,JPO&INPIT |
