PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which film forming speed is improved even if a film forming area is large, occurrence of particles is suppressed and a film superior in film quality and film thickness uniformity can be formed.

SOLUTION: The apparatus is provided with a dielectric substrate 32 arranged above a substrate of a treatment object 52, and antenna elements 38 in which storage holes 36 extending in a direction almost parallel to a surface of the substrate of the treatment object 52 are formed in the dielectric substrate 32 and which are formed of rod-like conductors disposed in the storage holes 36. The apparatus is also provided with a plasma generating part 30 where gas radiation ports 44 passing through the dielectric substrate 32 are formed in regions which do not match with the storage holes 36 of the dielectric substrate 32.

COPYRIGHT: (C)2009,JPO&INPIT