| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality semiconductor wherein an element isolation region can be formed stably, regardless of the intervals of patterns. SOLUTION: An insulation film layer consists of a silicon nitride layer 203 and a silicon oxide film 204 which are formed immediately below an antireflection film 202 existing below a patterned resist 201. In etching the insulation film layer, etching is conducted at a treatment pressure of 0.5 to 1.5 Pa, using a mixed gas of HBr and CHF<SB>3</SB>which have a low selectivity of the silicon oxide film 204 relative to the silicon substrate 205, and CF<SB>4</SB>close to finishing of the etching, and etching is progressed, while making a reactive product 207 attach to the wall surface of the insulation film layer consisting of the silicon nitride film 203 and the silicon oxide film 204. Consequently, a trench having few variations in shape and a fully rounded top round can be formed, irrespective of the pattern intervals. COPYRIGHT: (C)2009,JPO&INPIT
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