| 摘要 |
PROBLEM TO BE SOLVED: To form extremely shallow junction with shallow junction and without a crystal-defect. SOLUTION: Pulse width of a pulse laser beam 6 and moving speed of a semiconductor substrate are controlled so that total irradiation time of the laser beam per unit region in a surface layer part is within a range of 1μs to 999μs and the number of irradiating times becomes not more than the prescribed number of times with a condition that the surface layer part in which impurities (ions) are implanted is not melted. The surface layer part is irradiated with the pulse laser beam 6. COPYRIGHT: (C)2009,JPO&INPIT
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