发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce fluctuation in size of a metal resistance element by preventing generation of standing waves within a resist film, during exposure in the photomechanical process technology for defining a forming position of the metal resistance element. SOLUTION: An underlayer insulating film 23 of the metal resistance element 27 is provided, in the longitudinal direction of the metal resistance element 27, with a curving plane projected upward, to occupy 40% or more of the upper plane between connecting holes 25, 25 of the metal resistance element 27. The metal resistance element 27 is provided with contacts and a curving plane, projected upward to occupy 40% or more of the upper and lower planes among contacts due to the curving planes of the underlayer insulating film 23 in the longitudinal direction of the same element. Since the reflected light of the exposing light is scattered by the curving planes, at the upper and lower planes of a metal film to form the metal resistance element 27 at exposure in the photoengraving technique to define the forming position of the metal resistance element 27, generation of the standing waves, in the resist film due to the reflected light and incident light, can be prevented. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008251616(A) 申请公布日期 2008.10.16
申请号 JP20070087778 申请日期 2007.03.29
申请人 RICOH CO LTD 发明人 YAMASHITA KIMIHIKO
分类号 H01L21/822;H01L21/027;H01L21/3205;H01L23/52;H01L27/04 主分类号 H01L21/822
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