发明名称 METHOD FOR GROWING CORUNDUM SINGLE CRYSTAL, CORUNDUM SINGLE CRYSTAL AND CORUNDUM SINGLE CRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for growing high quality corundum single crystal ingot at high yield, and to provide a high quality corundum single crystal for a high luminance light emitting element prepared from the ingot with a high yield. SOLUTION: In growing the corundum single crystal, raw materials are housed in a container, then the container is led into a furnace, while the upper part of the furnace is heated to a high temperature and a zone, imparted of temperature gradient of 0.1-10.0°C/mm toward the lower part, is provided in the furnace, and the container is moved from the upper part to the lower part of the furnace through the zone imparted of this temperature gradient, thereby the raw materials in the container are unidirectionally coagulated. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008247706(A) 申请公布日期 2008.10.16
申请号 JP20070094031 申请日期 2007.03.30
申请人 JFE MINERAL CO LTD;DAIICHI KIDEN:KK 发明人 MATSUSHITA MITSUYOSHI;IWASAKI YOSUKE;YAMAGA NORIO
分类号 C30B29/20;C30B11/00 主分类号 C30B29/20
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