| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a simple structure and restrains signal attenuation. SOLUTION: As a semiconductor substrate 21 having a SOI structure, insulating films 23, 24, and 25 are laminated to achieve lower capacitance and higher resistance. A capacitor Ca consists of an element formation region 26a formed so as to be separated from a semiconductor layer 26 and a conductor film 29 provided with a silicon oxide film 28 interposed between the conductor film 29 and the upper surface of the element formation region 26a. A capacitor Cb consists of the conductor film 29 and an electrode 33 provided with a silicon oxide film 31 interposed between the electrode 33 and the conductor film 29. These capacitors are connected in parallel to function as one capacitor. Such capacitors are connected in series to obtain a high voltage that is the sum total of the division voltages of the respective capacitors. Despite parasitic capacitance between a silicon substrate 22 and the respective capacitors C1 through Cn, the quartz glass layer 24 allows lower capacitance and higher resistance to be achieved and signal attenuation caused by leakage to a ground terminal to be prevented. COPYRIGHT: (C)2009,JPO&INPIT
|
