发明名称 |
MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
The structure of the MOS transistor provided in this invention has LDD (lightly doped drain) and halo doped regions removed from the source, the drain or both regions in the substrate for improved linearity range when operated as a voltage-controlled resistor. The removal of the LDD and halo doped regions is performed by simply modifying the standard mask of the MOS process using a logic operation layer with no extra mask required.
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申请公布号 |
US2008251841(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080056293 |
申请日期 |
2008.03.27 |
申请人 |
HUANG KAI-YI;YEH TA-HSUN;JEAN YUH-SHENG |
发明人 |
HUANG KAI-YI;YEH TA-HSUN;JEAN YUH-SHENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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