发明名称 |
POLYSILICON DEPOSITION AND ANNEAL PROCESS ENABLING THICK POLYSILICON FILMS FOR MEMS APPLICATIONS |
摘要 |
A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100°C or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film. |
申请公布号 |
WO2008124595(A2) |
申请公布日期 |
2008.10.16 |
申请号 |
WO2008US59415 |
申请日期 |
2008.04.04 |
申请人 |
ANALOG DEVICES, INC.;NUNAN, THOMAS, KIERAN |
发明人 |
NUNAN, THOMAS, KIERAN |
分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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