| 摘要 |
<p>[PROBLEMS] To suppress short channel effects and obtain a high driving current by means of a semiconductor device having an MISFET wherein a material having high mobility and high dielectric constant, such as germanium, is used for a channel. [MEANS FOR SOLVING PROBLEMS] A p-type well is formed on a surface of a p-type silicon substrate. A silicon germanium layer having a dielectric constant higher than that of the p-type silicon substrate is formed to have a thickness of 30nm or less on the p-type well. Then, on the silicon germanium layer, a germanium layer having a dielectric constant higher than that of the silicon germanium layer is formed to have a thickness of 3-40nm by epitaxial growing. The germanium layer is permitted to be a channel region, and a gate insulating film, a gate electrode, a side wall insulating film, an n-type impurity diffusion region and a silicide layer are formed.</p> |
