发明名称 CU-NI-SI-CO-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCTION THEREOF
摘要 <p>Disclosed is a Cu-Ni-Si-Co-based alloy reduced in the production of a coarse second phase particle. In the process for producing a Cu-Ni-Si-Co-based alloy; (1) the hot rolling is carried out after heating at 950 to 1050°C for 1 hour or longer, and the hot rolling termination temperature is fixed at 850°C or higher, and the cooling is carried out at a rate of 15°C/s or more; and (2) the solution treatment is carried out at 850 to 1050°C, and the cooling is carried out at a rate of 15°C/s or more. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 2.5 mass% of Ni, 0.5 to 2.5 mass% of Co and 0.30 to 1.20 mass% of Si, with the remainder being Cu and unavoidable impurities. The copper alloy contains no second phase particle having a particle diameter greater than 10 µm, and contains a second phase particle having a particle diameter of 5 to 10 µm at a density of 50 particles/mm&lt;SUP&gt;2&lt;/SUP&gt; or less in a cross-section parallel to the rolling direction.</p>
申请公布号 WO2008123436(A1) 申请公布日期 2008.10.16
申请号 WO2008JP56142 申请日期 2008.03.28
申请人 NIPPON MINING & METALS CO., LTD.;KUWAGAKI, HIROSHI 发明人 KUWAGAKI, HIROSHI
分类号 C22C9/01;C22C9/06;C22C9/00;C22C9/02;C22C9/04;C22C9/05;C22C9/10;C22F1/00;C22F1/08;H01B1/02;H01B5/02 主分类号 C22C9/01
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