| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative resist material having a significantly high alkali dissolution rate contrast before and after exposure, high sensitivity, high resolution and small line edge roughness, showing excellent etching durability, and suitable as a fine pattern forming material for manufacturing a VLSI or producing a photomask pattern, and to provide a method for forming a pattern using the above resist material. <P>SOLUTION: The negative resist material contains a polymer compound having a repeating unit by copolymerization expressed by formula (1) and a weight average molecular weight of 1,000 to 500,000. In formula (1), R<SP>1</SP>represents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; X represents a methylene group, an oxygen atom or a sulfur atom; m is an integer of 1 to 3; n is 1 or 2, satisfying m+n=4; R<SP>2</SP>represents a hydrogen atom or a methyl group; R<SP>3</SP>represents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; p and q are integers 1 to 3 satisfying p+t=5 and q+u=7; and a and b satisfy 0<(a-1)<1.0, 0≤(b-1)<1.0, 0≤(b-2)<1.0, 0<(b-1)+(b-2)<1.0. Thereby, the resist material has a significantly high alkali dissolution rate contrast before and after exposure, high sensitivity and high resolution and a preferable pattern profile, suppresses an acid diffusion rate, shows excellent etching durability, and is suitable as a fine pattern forming material for manufacturing the VLSI or a photomask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
