| 摘要 |
PROBLEM TO BE SOLVED: To form a desired resist pattern accurately by devising a lithography process so that dimensional error of a mask pattern in a photo mask is easily and certainly corrected. SOLUTION: First, the relation between a dimension changing with thickening of the resist pattern and a temperature of heat treatment in a process of thickening is previously found. Continuously, the dimension of the mask pattern is measured, and the measurement result is applied to the relation to decide an optimum heat treatment temperature for thickening the resist pattern into a desired dimension. COPYRIGHT: (C)2009,JPO&INPIT |
