| 摘要 |
PROBLEM TO BE SOLVED: To inspect a defect on a wafer having a pattern with a high step difference under a semiconductor manufacturing process such as a contact hole to quickly acquire information such as a position and a kind of the defect such as a non-opened defect by dry etching, and to provide a method of specifying a generation process of the defect and a factor thereof, based on the acquired defect information, so as to enhance a yield and to shorten process optimization time. SOLUTION: An electron beam having 100 eV or more and 1,000 eV or less of irradiation energy is scanned/irradiated to the wafer 18 having the pattern with the high step difference under the semiconductor manufacturing process, the defect is inspected quickly based on an image of a secondary electron generated therein. The wafer 18 is irradiated at a high speed with the electron beam while moving the wafer 18, before acquiring the image of the secondary electron, to control a wafer 18 surface at a desired charge voltage. The kind of the defect is determined based on the acquired secondary electron image to display a wafer 18 in-plane distribution. COPYRIGHT: (C)2009,JPO&INPIT
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