| 摘要 |
PROBLEM TO BE SOLVED: To obtain knowledge regarding impurity concentration that closely approximates that in actual wiring structure, by measuring precisely the impurity concentration in a wiring conductive material, under a condition approximating the actual wiring structure, using a sample of relatively simple constitution, and to make the knowledge reflect on actual wiring formation. SOLUTION: A wiring groove 1a is formed in a silicon substrate 1, the wiring groove 1a is embedded by the wiring conductive material 3 to form wiring-like structure 4, and the sample 11 is prepared. The wiring conductive material 3 of the wiring-like structure 4 is subjected to SIMS-analysis by a SIMS method, by using the sample 11. COPYRIGHT: (C)2009,JPO&INPIT
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