| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method of a crystal substrate easily and highly precisely forming recessed parts different in depth. SOLUTION: This etching method of the crystal substrate is furnished with: a first etching process to anisotropically etch the crystal substrate 1 by providing a first correction pattern 21 to form the first recessed part and a second correction pattern 22 to form the second recessed part as a mask to form the first recessed part shallow in depth and the second recessed part deep in depth on the crystal substrate 1 and to etch to the midway in the depth direction of the second recessed part by using the second correction pattern 22; a removing process to make length of the first correction pattern 21 and residual length of the second correction pattern 22 the same length by removing a part of the mask 10; and a second etching process to form the first recessed part and the second recessed part by using the first correction pattern 21 and the second correction pattern 22. COPYRIGHT: (C)2009,JPO&INPIT
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