发明名称 |
METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR AND SOLID-STATE IMAGE SENSOR |
摘要 |
There is provide a divided exposure technology capable of restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.
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申请公布号 |
US2008254564(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080050930 |
申请日期 |
2008.03.18 |
申请人 |
KIMURA MASATOSHI;HONDA HIROKI |
发明人 |
KIMURA MASATOSHI;HONDA HIROKI |
分类号 |
H01L31/18;G03F7/26 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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