One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
申请公布号
US2008254569(A1)
申请公布日期
2008.10.16
申请号
US20070870618
申请日期
2007.10.11
申请人
HOFFMAN RANDY L;HERMAN GREGORY S;MARDILOVICH PETER P
发明人
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P.
