发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon nitride films. A silicon nitride film which is a lower layer is formed using NH3 as a nitrogen source gas by a CVD method and contains a larger number of N-H bonds than the upper layer. A second silicon nitride film which is an upper layer is formed using N2 as a nitrogen source gas by a CVD method and contains a larger number of Si-H bonds than the lower layer. |
申请公布号 |
WO2008123264(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
WO2008JP55619 |
申请日期 |
2008.03.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;NODA, KOSEI;SATO, NANAE |
发明人 |
NODA, KOSEI;SATO, NANAE |
分类号 |
H01L21/8247;H01L21/316;H01L21/318;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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