| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of correcting a mask pattern achieving a uniform gate dimension even in an environment in which an amount of step is different, depending on the size of an active area and the type of a transistor to be formed. <P>SOLUTION: In the pattern correction method for the mask pattern to be formed on an exposure mask, the amount of correction to be applied to the mask pattern is specified for each size of the active area where the mask pattern is transferred. The mask pattern is corrected on the basis of the specified amount of correction. <P>COPYRIGHT: (C)2009,JPO&INPIT |
